Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-02-28T04:26:00Z | - |
dc.date.available | 2018-02-28T04:26:00Z | - |
dc.date.issued | 2011-05 | - |
dc.identifier.citation | Solid State Electronics 2011, 62(1),77-81 | en_US |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0038110111001481?via%3Dihub | - |
dc.description.abstract | We investigated the effect of photon irradiation with various energies on the gate bias instability of indium-gallium-zinc oxide transistors. The illumination of red and green light on the transistor caused positive threshold voltage (V-th) shifts of 0.23 V and 0.18 V. respectively, while it did not affect the V-th value in blue light after a positive bias stress. However, the stability of transistors was deteriorated with increasing photon energy after a negative bias stress: negative V-th shifts for red (-0.23 V) and blue light (-3.7 V). This difference can be explained by the compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation. (C) 2011 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2010-0008412). J.K.J. acknowledges the support by the National Research Foundation of Korea (NRF) funded by the Converging Research Center Program through the Ministry of Education, Science and Technology (2010K001062). | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND | en_US |
dc.subject | InGaZnO | en_US |
dc.subject | Thin film transistor | en_US |
dc.subject | Photon irradiation | en_US |
dc.subject | Bias instability | en_US |
dc.title | The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 62 | - |
dc.identifier.doi | 10.1016/j.sse.2011.04.014 | - |
dc.relation.page | 77-81 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.contributor.googleauthor | Kim, Sangwook | - |
dc.contributor.googleauthor | Kim, Sunil | - |
dc.contributor.googleauthor | Kim, Changjung | - |
dc.contributor.googleauthor | Park, JaeChul | - |
dc.contributor.googleauthor | Song, Ihun | - |
dc.contributor.googleauthor | Jeon, Sanghun | - |
dc.contributor.googleauthor | Ahn, Seung-Eon | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2011208801 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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