TY - JOUR AU - 박진성 DA - 2011/05 PY - 2011 UR - http://www.sciencedirect.com/science/article/pii/S0038110111001481?via%3Dihub AB - We investigated the effect of photon irradiation with various energies on the gate bias instability of indium-gallium-zinc oxide transistors. The illumination of red and green light on the transistor caused positive threshold voltage (V-th) shifts of 0.23 V and 0.18 V. respectively, while it did not affect the V-th value in blue light after a positive bias stress. However, the stability of transistors was deteriorated with increasing photon energy after a negative bias stress: negative V-th shifts for red (-0.23 V) and blue light (-3.7 V). This difference can be explained by the compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation. (C) 2011 Elsevier Ltd. All rights reserved. PB - PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND KW - InGaZnO KW - Thin film transistor KW - Photon irradiation KW - Bias instability TI - The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors IS - 1 VL - 62 DO - 10.1016/j.sse.2011.04.014 T2 - SOLID-STATE ELECTRONICS ER -