The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors
- Title
- The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors
- Author
- 박진성
- Keywords
- Oxide semiconductor thin film transistor; Nitrogen doping; Negative bias stress; Scattering mechanism
- Issue Date
- 2015-11
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- APPLIED SURFACE SCIENCE, v. 355, Page. 1267-1271
- Abstract
- The effect of nitrogen doping in Ge-In-Ga-O (GIGO) semiconductors was investigated via thin film characterization and the evaluation of the associated thin film transistor (TFT) properties. As the nitrogen content [N-2/(Ar + O-2 + N-2)] increases from 0% to 40% during the sputter deposition, the threshold voltage (V-th) of the corresponding TFT devices shifts toward positive values (from -1.88 to 3.08 V) and the subthreshold swing decreases (from 0.40 to 0.18V/decade) accordingly, while the amount of V-th shift (Delta V-th) by hysteresis is suppressed (from 1.33 to 0.22V). In particular, the device stability under negative gate bias (-20V) stress for 3 h improves considerably with total threshold voltage shift (Delta V-th) values of -6.25 V and -0.69V. As the amount of nitrogen incorporated in the semiconductor increase, the device mu(FE) decreases significantly (from 193 to 5.76 cm(2)/Vs). Temperature dependent analyses suggest that Coulombic scattering of the carriers near the nitrogen species is the major mechanism of such mobility degradation. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0169433215018577?via%3Dihubhttp://hdl.handle.net/20.500.11754/29008
- ISSN
- 0169-4332; 1873-5584
- DOI
- 10.1016/j.apsusc.2015.08.044
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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