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The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors

Title
The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors
Author
박진성
Keywords
Oxide semiconductor thin film transistor; Nitrogen doping; Negative bias stress; Scattering mechanism
Issue Date
2015-11
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v. 355, Page. 1267-1271
Abstract
The effect of nitrogen doping in Ge-In-Ga-O (GIGO) semiconductors was investigated via thin film characterization and the evaluation of the associated thin film transistor (TFT) properties. As the nitrogen content [N-2/(Ar + O-2 + N-2)] increases from 0% to 40% during the sputter deposition, the threshold voltage (V-th) of the corresponding TFT devices shifts toward positive values (from -1.88 to 3.08 V) and the subthreshold swing decreases (from 0.40 to 0.18V/decade) accordingly, while the amount of V-th shift (Delta V-th) by hysteresis is suppressed (from 1.33 to 0.22V). In particular, the device stability under negative gate bias (-20V) stress for 3 h improves considerably with total threshold voltage shift (Delta V-th) values of -6.25 V and -0.69V. As the amount of nitrogen incorporated in the semiconductor increase, the device mu(FE) decreases significantly (from 193 to 5.76 cm(2)/Vs). Temperature dependent analyses suggest that Coulombic scattering of the carriers near the nitrogen species is the major mechanism of such mobility degradation. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0169433215018577?via%3Dihubhttp://hdl.handle.net/20.500.11754/29008
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2015.08.044
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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