Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2017-09-08T07:12:59Z | - |
dc.date.available | 2017-09-08T07:12:59Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 355, Page. 1267-1271 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0169433215018577?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/29008 | - |
dc.description.abstract | The effect of nitrogen doping in Ge-In-Ga-O (GIGO) semiconductors was investigated via thin film characterization and the evaluation of the associated thin film transistor (TFT) properties. As the nitrogen content [N-2/(Ar + O-2 + N-2)] increases from 0% to 40% during the sputter deposition, the threshold voltage (V-th) of the corresponding TFT devices shifts toward positive values (from -1.88 to 3.08 V) and the subthreshold swing decreases (from 0.40 to 0.18V/decade) accordingly, while the amount of V-th shift (Delta V-th) by hysteresis is suppressed (from 1.33 to 0.22V). In particular, the device stability under negative gate bias (-20V) stress for 3 h improves considerably with total threshold voltage shift (Delta V-th) values of -6.25 V and -0.69V. As the amount of nitrogen incorporated in the semiconductor increase, the device mu(FE) decreases significantly (from 193 to 5.76 cm(2)/Vs). Temperature dependent analyses suggest that Coulombic scattering of the carriers near the nitrogen species is the major mechanism of such mobility degradation. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was funded by the MSIP (Ministry of Science, ICT & Future Planning), Korea in the ICT R&D Program (The core technology development of light and space adaptable energy-saving I/O platform for future advertising service, Grant no. 10041416). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Oxide semiconductor thin film transistor | en_US |
dc.subject | Nitrogen doping | en_US |
dc.subject | Negative bias stress | en_US |
dc.subject | Scattering mechanism | en_US |
dc.title | The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 355 | - |
dc.identifier.doi | 10.1016/j.apsusc.2015.08.044 | - |
dc.relation.page | 1267-1271 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Ahn, Byung Du | - |
dc.contributor.googleauthor | Lee, Kwang Ho | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015001918 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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