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dc.contributor.author김영호-
dc.date.accessioned2017-05-25T04:18:57Z-
dc.date.available2017-05-25T04:18:57Z-
dc.date.issued2015-09-
dc.identifier.citationORGANIC ELECTRONICS, v. 27, Page. 65-71en_US
dc.identifier.issn1566-1199-
dc.identifier.issn1878-5530-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1566119915301208-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27444-
dc.description.abstractFlexible polymer memory devices were fabricated based on 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-4,4'-oxydianiline #6FDA-ODA# polyimide #PI#/Cu2O nanocomposite via chemical curing, heat treatment, and post-heat treatment at low temperature #˂200 degrees C#. Following the deposition of a Cu bottom electrode on a commercial PI film substrate, a PI precursor, polyamic acid #PAA# was spin-coated onto the Cu bottom electrode, and Cu was dissolved into the PM, providing Cu ions for particle formation. The 6FDA-ODA PAA Cu complex was imidized via chemical curing using acetic anhydride and triethylamine at 50 degrees C, and thermal treatment was performed at 200 degrees C in a reducing atmosphere to remove the solvent completely and precipitate Cu nanoparticles. Post-heat treatment was sequentially carried out at 150 degrees C in an oxidizing atmosphere to oxidize Cu to Cu2O. The Al top electrode was deposited onto the 6FDA-ODA PI/Cu2O nanocomposite film, and the flexible memory device with a crossbar array showed an ON/OFF ratio of similar to 10#4#, endurance of 60 cycles, retention time of 10#4# s, and device yield of 86% #31 cells out of total 36 cells# under flat and bending conditions #bending radius similar to 1.5 mm# when the electrical measurements were performed in air at room temperature. #C# 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by 21C Frontier Research & Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (code #: 2011K000215). Also, special thanks to Soon-Yong Park (Research Park, LG Chem.) and Kwang-Joo Lee (R&D center, LG Chem.) who provided 6FDA-ODA FAA.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectPolymer memoryen_US
dc.subjectPolyimideen_US
dc.subjectCu2O nanoparticlesen_US
dc.subjectChemical curingen_US
dc.subjectPost-heat treatmenten_US
dc.titleThe formation of Cu2O nanoparticles in polyimide using Cu electrodes via chemical curing, and their application in flexible polymer memory devicesen_US
dc.typeArticleen_US
dc.relation.volume27-
dc.identifier.doi10.1016/j.orgel.2015.09.007-
dc.relation.page65-71-
dc.relation.journalORGANIC ELECTRONICS-
dc.contributor.googleauthorChoi, Dong Joo-
dc.contributor.googleauthorKim, Jeong-Ki-
dc.contributor.googleauthorSeong, Haseob-
dc.contributor.googleauthorJang, Min-Seok-
dc.contributor.googleauthorKim, Young-Ho-
dc.relation.code2015003362-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidkimyh-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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