TY - JOUR AU - 김영호 DA - 2015/09 PY - 2015 UR - http://www.sciencedirect.com/science/article/pii/S1566119915301208 UR - http://hdl.handle.net/20.500.11754/27444 AB - Flexible polymer memory devices were fabricated based on 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-4,4'-oxydianiline #6FDA-ODA# polyimide #PI#/Cu2O nanocomposite via chemical curing, heat treatment, and post-heat treatment at low temperature #˂200 degrees C#. Following the deposition of a Cu bottom electrode on a commercial PI film substrate, a PI precursor, polyamic acid #PAA# was spin-coated onto the Cu bottom electrode, and Cu was dissolved into the PM, providing Cu ions for particle formation. The 6FDA-ODA PAA Cu complex was imidized via chemical curing using acetic anhydride and triethylamine at 50 degrees C, and thermal treatment was performed at 200 degrees C in a reducing atmosphere to remove the solvent completely and precipitate Cu nanoparticles. Post-heat treatment was sequentially carried out at 150 degrees C in an oxidizing atmosphere to oxidize Cu to Cu2O. The Al top electrode was deposited onto the 6FDA-ODA PI/Cu2O nanocomposite film, and the flexible memory device with a crossbar array showed an ON/OFF ratio of similar to 10#4#, endurance of 60 cycles, retention time of 10#4# s, and device yield of 86% #31 cells out of total 36 cells# under flat and bending conditions #bending radius similar to 1.5 mm# when the electrical measurements were performed in air at room temperature. #C# 2015 Elsevier B.V. All rights reserved. PB - ELSEVIER SCIENCE BV KW - Polymer memory KW - Polyimide KW - Cu2O nanoparticles KW - Chemical curing KW - Post-heat treatment TI - The formation of Cu2O nanoparticles in polyimide using Cu electrodes via chemical curing, and their application in flexible polymer memory devices VL - 27 DO - 10.1016/j.orgel.2015.09.007 T2 - ORGANIC ELECTRONICS ER -