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Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions

Title
Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions
Author
박재근
Issue Date
2015-04
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v. 117, NO 15, Page. 153901-153901
Abstract
For Co2Fe6B2/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd](n)-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t(Fe)) between the Co2Fe6B2 pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t(Fe) increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd](n)-SyAF. However, it abruptly decreased by further increasing t(Fe) in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co2Fe6B2 pinned layer. Thus, the TMR ratio peaked at t(Fe) = 0.4 nm: i.e., 120% at 29 Omega mu m(2) (C) 2015 AIP Publishing LLC.
URI
http://scitation.aip.org/content/aip/journal/jap/117/15/10.1063/1.4918307http://hdl.handle.net/20.500.11754/23837
ISSN
0021-8979; 1089-7550
DOI
10.1063/1.4918307
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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