Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2016-10-17T00:43:28Z | - |
dc.date.available | 2016-10-17T00:43:28Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v. 117, NO 15, Page. 153901-153901 | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | http://scitation.aip.org/content/aip/journal/jap/117/15/10.1063/1.4918307 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/23837 | - |
dc.description.abstract | For Co2Fe6B2/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd](n)-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t(Fe)) between the Co2Fe6B2 pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t(Fe) increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd](n)-SyAF. However, it abruptly decreased by further increasing t(Fe) in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co2Fe6B2 pinned layer. Thus, the TMR ratio peaked at t(Fe) = 0.4 nm: i.e., 120% at 29 Omega mu m(2) (C) 2015 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2014R1A2A1A01006474) and Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.title | Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions | en_US |
dc.type | Article | en_US |
dc.relation.no | 15 | - |
dc.relation.volume | 117 | - |
dc.identifier.doi | 10.1063/1.4918307 | - |
dc.relation.page | 153901-153901 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Chae, Kyo-Suk | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2015003356 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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