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dc.contributor.author박재근-
dc.date.accessioned2016-10-17T00:43:28Z-
dc.date.available2016-10-17T00:43:28Z-
dc.date.issued2015-04-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v. 117, NO 15, Page. 153901-153901en_US
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.urihttp://scitation.aip.org/content/aip/journal/jap/117/15/10.1063/1.4918307-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23837-
dc.description.abstractFor Co2Fe6B2/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd](n)-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t(Fe)) between the Co2Fe6B2 pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t(Fe) increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd](n)-SyAF. However, it abruptly decreased by further increasing t(Fe) in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co2Fe6B2 pinned layer. Thus, the TMR ratio peaked at t(Fe) = 0.4 nm: i.e., 120% at 29 Omega mu m(2) (C) 2015 AIP Publishing LLC.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2014R1A2A1A01006474) and Brain Korea 21 PLUS Program in 2014.en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICSen_US
dc.titleDependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctionsen_US
dc.typeArticleen_US
dc.relation.no15-
dc.relation.volume117-
dc.identifier.doi10.1063/1.4918307-
dc.relation.page153901-153901-
dc.relation.journalJOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorChae, Kyo-Suk-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2015003356-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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