Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 백상현 | - |
dc.date.accessioned | 2023-07-14T01:26:27Z | - |
dc.date.available | 2023-07-14T01:26:27Z | - |
dc.date.issued | 2012-12 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v. 59, NO. 12, Page. 2969-2979 | - |
dc.identifier.issn | 1549-8328;1558-0806 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/6323051 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/183617 | - |
dc.description.abstract | Although content addressable memory (CAM) provides fast search operation; however, CAM has disadvantages like low bit density and high cost per bit. This paper presents a novel memory architecture called hybrid partitioned static random access memory-based ternary content addressable memory (HP SRAM-based TCAM), which emulates TCAM functionality with conventional SRAM, thereby eliminating the inherited disadvantages of conventional TCAMs. HP SRAM-based TCAM logically dissects conventional TCAM table in a hybrid way (column-wise and row-wise) into TCAM sub-tables, which are then processed to be mapped to their corresponding SRAM memory units. Search operation in HP SRAM-based TCAM involves two SRAM accesses followed by a logical ANDing operation. To validate and justify our approach, 512 36 HP SRAM-based TCAM has been implemented in Xilinx Virtex-5 field programmable gate array (FPGA) and designed using 65-nm CMOS technology. Implementation in FPGA is advantageous and a beauty of our proposed TCAM because classical TCAMs cannot be implemented in FPGA. After a thorough analysis, we have concluded that energy/bit/search of the proposed TCAM is 85.72 fJ. | - |
dc.language | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ANDing operation | - |
dc.subject | APT | - |
dc.subject | APTAG | - |
dc.subject | BPT | - |
dc.subject | hybrid partition | - |
dc.subject | SRAM | - |
dc.subject | TCAM | - |
dc.title | Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory | - |
dc.type | Article | - |
dc.relation.no | 12 | - |
dc.relation.volume | 59 | - |
dc.identifier.doi | 10.1109/TCSI.2012.2215736 | - |
dc.relation.page | 2969-2979 | - |
dc.relation.journal | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.contributor.googleauthor | Ullah, Zahid | - |
dc.contributor.googleauthor | Ilgon, Kim | - |
dc.contributor.googleauthor | Baeg, Sanghyeon | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | bau | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.