Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition

Abstract

Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and the device applications. Interestingly, ALD enable to deposit not only high-performance oxide semiconductor (a-IGZO etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have a great potential to solve the current material and device issues. ALD will be the emerging thin film process in the coming display application.