Proceedings of the International Display Workshops, v. 27, Page. 137-140
Abstract
Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and the device applications. Interestingly, ALD enable to deposit not only high-performance oxide semiconductor (a-IGZO etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have a great potential to solve the current material and device issues. ALD will be the emerging thin film process in the coming display application.