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Secure IC with Countermeasure to Unpowered Physical Attack using On-chip Photodiode and Charge Pump

Title
Secure IC with Countermeasure to Unpowered Physical Attack using On-chip Photodiode and Charge Pump
Author
최병덕
Keywords
secure circuit; invasive attack; physical attack; decapsulation; unpowered countermeasure; photodiode; charge pump; thin-oxide transistor
Issue Date
2021-01
Publisher
대한전자공학회
Citation
2021 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), page. 1-4
Abstract
An unpowered invasive or semi-invasive physical attack on a chip can be a severe threat to the secure data stored in the target chip. This paper presents a secure circuit that can detect unpowered attacks and destroy internal secure data using an on-chip photodiode and charge pump under an unpowered condition. If the chip is under a physical attack including decapsulation, the chip will be exposed to the incident light. The proposed circuit detects the light and converts this light into an electrical signal, which then activates the self-destroying circuit without need for power supply. The self-destroying mechanism uses a gate voltage which is higher than the gate-oxide breakdown voltage that can destroy the transistor of the chip. An on-chip photodiode is used for light sensing. As the harvested voltage from the photodiode is not enough to cause gate-oxide breakdown of the transistor, a charge pump is used to generate the high gate voltage. The charge pump is fabricated using a standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) process with an area of 0.12 mm(2). The charge pump output increases to 7 V with a supply voltage of 0.7 V.
URI
https://ieeexplore.ieee.org/document/9369784/https://repository.hanyang.ac.kr/handle/20.500.11754/175278
ISBN
978-1-7281-9161-4; 978-1-7281-9162-1
DOI
10.1109/ICEIC51217.2021.9369784
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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