Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2022-08-30T00:34:27Z | - |
dc.date.available | 2022-08-30T00:34:27Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.citation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v. 9, page. 42-48 | en_US |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9264257 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172619 | - |
dc.description.abstract | In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In0.53Ga0.47As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (μeff) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (Ioff), subthreshold slope (S.S.) and high μeff among reported GaSb p-MOSFETs. | en_US |
dc.description.sponsorship | This work was supported in part by the KIST Internal Research Program under Grant 2E28180; in part by the National Research Foundation of Korea under Grant 201902071513 and Grant 201902071513; and in part by BK21plus. (Sang-Hyeon Kim and Ilpyo Roh contributed equally to this work.) | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | GaSb | en_US |
dc.subject | III-V | en_US |
dc.subject | ultra-thin-body (UTB) | en_US |
dc.subject | InGaAs passivation | en_US |
dc.title | High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb | en_US |
dc.type | Article | en_US |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1109/JEDS.2020.3039370 | - |
dc.relation.page | 42-48 | - |
dc.relation.journal | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.contributor.googleauthor | Kim, Sang-Hyeon | - |
dc.contributor.googleauthor | Roh, Ilpyo | - |
dc.contributor.googleauthor | Han, Jae-Hoon | - |
dc.contributor.googleauthor | Geum, Dae-Myeong | - |
dc.contributor.googleauthor | Kim, Seong Kwang | - |
dc.contributor.googleauthor | Kang, Soo Seok | - |
dc.contributor.googleauthor | Kang, Hang-Kyu | - |
dc.contributor.googleauthor | Lee, Woo Chul | - |
dc.contributor.googleauthor | Kim, Seong Keun | - |
dc.contributor.googleauthor | Song, Yun Heub | - |
dc.relation.code | 2020050284 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
dc.identifier.orcid | https://orcid.org/0000-0001-5402-6765 | - |
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