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Improving Write Performance Through Reliable Asynchronous Operation in Physically-Addressable SSD

Title
Improving Write Performance Through Reliable Asynchronous Operation in Physically-Addressable SSD
Author
최정욱
Keywords
Flash translation layer; NAND flash memory; open-channel SSD; physically-addressable SSD; solid-state drive
Issue Date
2020-10
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ACCESS, v. 8, page. 195528-195540
Abstract
Physically-addressable solid-state drives (PASSDs) are secondary storage devices that provide a physical address-based interface for a host system to directly control NAND flash memory. PASSDs overcome the shortcomings such as latency variability, resource under-utilization, and log-on-log that are associated with legacy SSDs. However, in some operating environments, the write response time significantly increases because the PASSD reports the completion of a host write command synchronously (i.e., write-through) owing to reliability problems. It contrasts asynchronous processing (i.e., write-back), which reports a completion immediately after data are received in a high-performance volatile memory subsequently used as a write buffer to conceal the operation time of NAND flash memory. Herein, we propose a new scheme that guarantees write reliability to enable a reliable asynchronous write operation in PASSD. It is designed to use a large-granularity mapping table for minimizing the memory requirements and performing internal operations at an idle time to avoid response delays. Results demonstrate that the proposed PASSD reduces the average write response time by up to 88% and guarantees reliability without performance degradation.
URI
https://ieeexplore.ieee.org/document/9239952/https://repository.hanyang.ac.kr/handle/20.500.11754/171156
ISSN
2169-3536
DOI
10.1109/ACCESS.2020.3033886
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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