Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition
- Title
- Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition
- Author
- 박진성
- Keywords
- THIN-FILM TRANSISTORS; CYCLOPENTADIENYL INDIUM; IN2O3; GROWTH; PERFORMANCE; H2O
- Issue Date
- 2020-09
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v. 32, no. 17, page. 7397-7403
- Abstract
- Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (In(CH3)3[CH3OCH2CH2NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (∼0.35 Å per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 °C on the microstructure and chemical and physical properties of In2O3 films. Interestingly, the In2O3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 °C. For the 200 and 250 °C deposition temperatures, the phase of In2O3 transformed to a cubic structure. The crystalline structure of the In2O3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In2O3 layer as a semiconductor.
- URI
- https://pubs.acs.org/doi/10.1021/acs.chemmater.0c02306https://repository.hanyang.ac.kr/handle/20.500.11754/170733
- ISSN
- 0897-4756; 1520-5002
- DOI
- 10.1021/acs.chemmater.0c02306
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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