Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2022-05-10T07:15:23Z | - |
dc.date.available | 2022-05-10T07:15:23Z | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | CHEMISTRY OF MATERIALS, v. 32, no. 17, page. 7397-7403 | en_US |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.issn | 1520-5002 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acs.chemmater.0c02306 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/170733 | - |
dc.description.abstract | Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (In(CH3)3[CH3OCH2CH2NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (∼0.35 Å per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 °C on the microstructure and chemical and physical properties of In2O3 films. Interestingly, the In2O3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 °C. For the 200 and 250 °C deposition temperatures, the phase of In2O3 transformed to a cubic structure. The crystalline structure of the In2O3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In2O3 layer as a semiconductor. | en_US |
dc.description.sponsorship | This research was supported by Samsung Display Co., Ltd., Hansol Chemical, and Industry Technology R&D program of MOTIE (Ministry of Trade, Industry & Energy) [20010371]. This research used resources of the Center for Functional Nanomaterials, a U.S. DOE Office of Science Facility, and the Scientific Data and Computing Center, a component of the Computational Science Initiative at Brookhaven National Laboratory under contract no. DE-SC0012704. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | CYCLOPENTADIENYL INDIUM | en_US |
dc.subject | IN2O3 | en_US |
dc.subject | GROWTH | en_US |
dc.subject | PERFORMANCE | en_US |
dc.subject | H2O | en_US |
dc.title | Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 17 | - |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1021/acs.chemmater.0c02306 | - |
dc.relation.page | 7397-7403 | - |
dc.relation.journal | CHEMISTRY OF MATERIALS | - |
dc.contributor.googleauthor | Lee, Jung-Hoon | - |
dc.contributor.googleauthor | Sheng, Jiazhen | - |
dc.contributor.googleauthor | An, Hyesung | - |
dc.contributor.googleauthor | Hong, TaeHyun | - |
dc.contributor.googleauthor | Kim, Hyun You | - |
dc.contributor.googleauthor | Lee, HyunKyung | - |
dc.contributor.googleauthor | Seok, Jang Hyeon | - |
dc.contributor.googleauthor | Park, Jung Woo | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2020047122 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
dc.identifier.orcid | http://orcid.org/0000-0002-9070-5666 | - |
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