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Effects of H2O2 and pH on the Chemical Mechanical Planarization of Molybdenum

Title
Effects of H2O2 and pH on the Chemical Mechanical Planarization of Molybdenum
Author
박진구
Keywords
molybdenum; CMP; hydrogen peroxide; chronoamperometry
Issue Date
2021-09
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 10, NO 9, Page. 1-7
Abstract
The effects of H2O2 on the chemical etching and removal rate (RR) of molybdenum (Mo) were investigated. Static etch rate (SER) and chemical mechanical planarization (CMP) experiments were performed using H2O2-based slurries at different pH levels. X-ray photoelectron spectroscopy (XPS) and potentiodynamic polarization analysis showed the formation of Mo oxides by the reaction between Mo and H2O2. The Mo SER, which increased with H2O2 concentration, supported the dissolution of Mo oxides through the formation of peroxo Mo complexes with H2O2. The CMP removal mechanism was demonstrated by comparing the CMP RR with and without silica abrasives. In addition, the Mo oxidation rate by H2O2 on a millisecond time scale was characterized with chronoamperometry to explain different RRs at pH values ranging from 2 to 8. The CMP RR of Mo was high at pH 2 and pH 10; however, pH 2 showed a lower SER than pH 10, leading to lower surface roughness.
URI
https://iopscience.iop.org/article/10.1149/2162-8777/ac26d3https://repository.hanyang.ac.kr/handle/20.500.11754/170583
ISSN
21628769; 21628777
DOI
10.1149/2162-8777/ac26d3
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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