Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source
- Title
- Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source
- Author
- 안진호
- Keywords
- atomic layer deposition (ALD); aluminum nitride; hydrazine; trimethyl aluminum (TMA)
- Issue Date
- 2020-07
- Publisher
- MDPI
- Citation
- MATERIALS, v. 13, no. 15, article no. 3387
- Abstract
- Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 degrees C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 degrees C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 degrees C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N(2)H(4)as a replacement for NH(3)is a good alternative due to its stringent thermal budget.
- URI
- https://www.mdpi.com/1996-1944/13/15/3387https://repository.hanyang.ac.kr/handle/20.500.11754/169484
- ISSN
- 1996-1944
- DOI
- 10.3390/ma13153387
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
- Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source.pdfDownload
- Export
- RIS (EndNote)
- XLS (Excel)
- XML