Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2022-03-29T01:40:01Z | - |
dc.date.available | 2022-03-29T01:40:01Z | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | MATERIALS, v. 13, no. 15, article no. 3387 | en_US |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://www.mdpi.com/1996-1944/13/15/3387 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/169484 | - |
dc.description.abstract | Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 degrees C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 degrees C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 degrees C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N(2)H(4)as a replacement for NH(3)is a good alternative due to its stringent thermal budget. | en_US |
dc.description.sponsorship | This work was financially supported by RASIRC Inc. This work was also partially supported by Brain Pool Program through NRF by the Ministry of Science and ICT in Korea (No. 2019H1D3A2A01101691) and the MOTIE (Ministry of Trade, Industry, and Energy) in Korea under the Fostering Global Talents for Innovative Growth Program (P0008750) supervised by the Korea Institute for Advancement of Technology (KIAT). | en_US |
dc.language.iso | en | en_US |
dc.publisher | MDPI | en_US |
dc.subject | atomic layer deposition (ALD) | en_US |
dc.subject | aluminum nitride | en_US |
dc.subject | hydrazine | en_US |
dc.subject | trimethyl aluminum (TMA) | en_US |
dc.title | Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source | en_US |
dc.type | Article | en_US |
dc.relation.no | 15 | - |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.3390/ma13153387 | - |
dc.relation.page | 1-10 | - |
dc.relation.journal | MATERIALS | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Hwang, Su Min | - |
dc.contributor.googleauthor | Le, Dan N. | - |
dc.contributor.googleauthor | Kondusamy, Aswin L. N. | - |
dc.contributor.googleauthor | Mohan, Jaidah | - |
dc.contributor.googleauthor | Kim, Sang Woo | - |
dc.contributor.googleauthor | Kim, Jin Hyun | - |
dc.contributor.googleauthor | Lucero, Antonio T. | - |
dc.contributor.googleauthor | Ravichandran, Arul | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2020047523 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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