Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages
- Title
- Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages
- Author
- 김영호
- Keywords
- LIGHT-EMITTING-DIODES; INTERFACIAL REACTIONS; AU; RELIABILITY; NI; CU
- Issue Date
- 2020-05
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 59, no. SL, article no. SLLE03
- Abstract
- In this study, the effect of growth of intermetallic compound (IMC) layer between Au-20 wt% Sn solder and electroless Ni/immersion Au (ENIG) on the thermal resistance of a flip-chip (FC) light emitting diode (LED) package was investigated. Two IMC layers were formed at the interface of FC LED package, including Au5Sn and (Ni, Au)(3)Sn-4 that were identified using a transmission electron microscopy. A thermal aging test was carried out at 200 degrees C for 1000 h to observe IMCs growth. After 1000 h, the (Ni, Au)(3)Sn-4 thickness increased to about 1.5 mu m and the thermal resistance of the FC LED package increased by 3.5 times compared to the initial thermal resistance of 2 K W-1. As the (Ni, Au)(3)Sn-4 grew, a calculation of thermal resistance also increased comparing to the initial aging test, thus, the growth of (Ni, Au)(3)Sn-4 layer can be effective factor on the increase of thermal resistances of FC LED package. (C) 2020 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.35848/1347-4065/ab922ehttps://repository.hanyang.ac.kr/handle/20.500.11754/166214
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.35848/1347-4065/ab922e
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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