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Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages

Title
Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages
Author
김영호
Keywords
LIGHT-EMITTING-DIODES; INTERFACIAL REACTIONS; AU; RELIABILITY; NI; CU
Issue Date
2020-05
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 59, no. SL, article no. SLLE03
Abstract
In this study, the effect of growth of intermetallic compound (IMC) layer between Au-20 wt% Sn solder and electroless Ni/immersion Au (ENIG) on the thermal resistance of a flip-chip (FC) light emitting diode (LED) package was investigated. Two IMC layers were formed at the interface of FC LED package, including Au5Sn and (Ni, Au)(3)Sn-4 that were identified using a transmission electron microscopy. A thermal aging test was carried out at 200 degrees C for 1000 h to observe IMCs growth. After 1000 h, the (Ni, Au)(3)Sn-4 thickness increased to about 1.5 mu m and the thermal resistance of the FC LED package increased by 3.5 times compared to the initial thermal resistance of 2 K W-1. As the (Ni, Au)(3)Sn-4 grew, a calculation of thermal resistance also increased comparing to the initial aging test, thus, the growth of (Ni, Au)(3)Sn-4 layer can be effective factor on the increase of thermal resistances of FC LED package. (C) 2020 The Japan Society of Applied Physics
URI
https://iopscience.iop.org/article/10.35848/1347-4065/ab922ehttps://repository.hanyang.ac.kr/handle/20.500.11754/166214
ISSN
0021-4922; 1347-4065
DOI
10.35848/1347-4065/ab922e
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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