Cathodoluminescence characteristics of nitrogen-incorporated diamond films grown by microwave plasma CVD
- Title
- Cathodoluminescence characteristics of nitrogen-incorporated diamond films grown by microwave plasma CVD
- Author
- 박진석
- Keywords
- diamond film; nitrogen incorporation; cathodoluminescence; band-A emission; nitrogen-related band
- Issue Date
- 2003-12
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH
- Citation
- Journal of Ceramic Processing Research, v. 4, no. 4, page. 173-176
- Abstract
- In this paper, we present experimental results regarding the growth of nitrogen-incorporated diamond films grown by employing a microwave plasma CVD method. For grown films, cathodoluminescence (CL) characteristics are examined in terms of growth conditions, such as gas mixture (N-2/(CH4+H-2)) ratio and microwave power. From the CL characteristics the relative intensity of the so called band-A (related to a dislocation, I-A) centered at 430 nm to the nitrogen-related band (IN), which is composed of two peaks centered at 578 nm (related to a nitrogen-vacancy complex) and at 637 nm (related to a vacancy trapped at a substitutional nitrogen site). The effect of oxygen, which is added during diamond growth, on the CL property is also investigated. In addition, the Raman spectra, XRD patterns, and field-emission SEM morphologies are analyzed for all the films grown.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001022490https://repository.hanyang.ac.kr/handle/20.500.11754/156564
- ISSN
- 1229-9162
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
- Files in This Item:
- KCI_FI001022490.pdfDownload
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