Diamond films including nanocrystallites are grown by microwave plasma chemical vapor deposition using O2 additives and negative substrate bias at growth step. Effects of growth parameters on film properties are characterized by Raman spectra, SEM, and AFM images. It is found that the surface roughness and the microstructure of grown films can be controlled by changing O2 gas ratio. The I V characteristics are also investigated in terms of growth conditions of diamond films. The surface roughness and the sp2 phase of the grown diamond films turn out to be crucial factors for reducing leakage currents at diamond/metal interfaces