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The Effects of Semi-insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-modulated Semiconductor Lasers
- Title
- The Effects of Semi-insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-modulated Semiconductor Lasers
- Author
- 어영선
- Keywords
- Semiconductor lasers; Temperature; Quantum well devices; Bandwidth; Leakage current; Threshold current; Diode lasers; Dry etching; Capacitive sensors; Power lasers
- Issue Date
- 2004-05
- Publisher
- IEEE
- Citation
- 2004 International Conference on Indium Phosphide and Related Materials, Page. 228-231
- Abstract
- We have investigated the effects of current blocking layers in 10 Gb/s 1.3 /spl mu/m DFB lasers in view of the slope efficiency and the modulation bandwidth. It is experimentally shown that the current blocking structure consisting of p-InP(clad)/n-InP/i-InP/n-InP/i-InP/n-InP(sub.) gives a high slope efficiency as well as a large modulation bandwidth of above 10 GHz at 70 /spl deg/C.
- URI
- https://ieeexplore.ieee.org/document/1442654?arnumber=1442654&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/139377
- ISBN
- 0-7803-8595-0
- ISSN
- 1092-8669
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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