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dc.contributor.author어영선-
dc.date.accessioned2020-03-24T00:36:55Z-
dc.date.available2020-03-24T00:36:55Z-
dc.date.issued2004-05-
dc.identifier.citation2004 International Conference on Indium Phosphide and Related Materials, Page. 228-231en_US
dc.identifier.isbn0-7803-8595-0-
dc.identifier.issn1092-8669-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1442654?arnumber=1442654&SID=EBSCO:edseee-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/139377-
dc.description.abstractWe have investigated the effects of current blocking layers in 10 Gb/s 1.3 /spl mu/m DFB lasers in view of the slope efficiency and the modulation bandwidth. It is experimentally shown that the current blocking structure consisting of p-InP(clad)/n-InP/i-InP/n-InP/i-InP/n-InP(sub.) gives a high slope efficiency as well as a large modulation bandwidth of above 10 GHz at 70 /spl deg/C.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectSemiconductor lasersen_US
dc.subjectTemperatureen_US
dc.subjectQuantum well devicesen_US
dc.subjectBandwidthen_US
dc.subjectLeakage currenten_US
dc.subjectThreshold currenten_US
dc.subjectDiode lasersen_US
dc.subjectDry etchingen_US
dc.subjectCapacitive sensorsen_US
dc.subjectPower lasersen_US
dc.titleThe Effects of Semi-insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-modulated Semiconductor Lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/ICIPRM.2004.1442654-
dc.contributor.googleauthorKim, Dongchurl-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorEo, Yungseon-
dc.contributor.googleauthorKang, Joongkoo-
dc.contributor.googleauthorPark, Munkyu-
dc.contributor.googleauthorJang, Donghoon-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pideo-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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