Mask Materials and Designs for Extreme Ultra Violet Lithography
- Title
- Mask Materials and Designs for Extreme Ultra Violet Lithography
- Author
- 안진호
- Keywords
- Extreme ultraviolet lithography; EUV mask; Absorber materials; Multilayer mirror; Phase shift mask
- Issue Date
- 2018-01
- Publisher
- KOREAN INST METALS MATERIALS
- Citation
- ELECTRONIC MATERIALS LETTERS, v. 14, no. 5, page. 533-547
- Abstract
- Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.
- URI
- https://link.springer.com/article/10.1007%2Fs13391-018-0058-6https://repository.hanyang.ac.kr/handle/20.500.11754/116992
- ISSN
- 1738-8090; 2093-6788
- DOI
- 10.1007/s13391-018-0058-6
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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