High performance a-InZnSnO thin-film transistor with a self-diffusion-barrier formable copper contact
- Title
- High performance a-InZnSnO thin-film transistor with a self-diffusion-barrier formable copper contact
- Author
- 정재경
- Keywords
- Amorphous indium tin zinc oxide; Copper-calcium alloy; High mobility; Thin-film transistors; Stability
- Issue Date
- 2017-09
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v. 637, page. 3-8
- Abstract
- A low resistivity copper (Cu) film was used as a source/drain contact layer to fabricate high performance amorphous In-Zn-Sn-O (a-IZTO) thin-film transistors (TFTs). The calcium (Ca)-doped Cu films greatly simplified the conventional Cu/diffusion barrier stack structure and process, which allowed the production of promising aIZTO TFTs with a saturation mobility of 22.8 cm(2)/Vs and an ION/OFF ratio of 108. Furthermore, the a-IZTO TFTs with the Ca -doped Cu contact exhibited better gate bias thermal stress-induced stabilities than those with the pure Cu contact. This was attributed to the effective formation of a self-diffusion CuO. barrier at the Cu/IZTO interfaces. (C) 2017 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S004060901730189X?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/115714
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2017.03.014
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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