Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion
- Title
- Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion
- Author
- 안진호
- Keywords
- Phase-change material; Phase-change memory; Doping; Ge2Sb2Te5; Lattice distortion
- Issue Date
- 2019-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- Scripta Materialia, v. 170, Page. 16-19
- Abstract
- To overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S1359646219302921?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/111149
- ISSN
- 1359-6462
- DOI
- 10.1016/j.scriptamat.2019.05.024
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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