Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)MATERIALS SCIENCE AND ENGINEERING(신소재공학부)Articles
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dc.contributor.author안진호-
dc.date.accessioned2019-10-17T01:11:35Z-
dc.date.available2019-10-17T01:11:35Z-
dc.date.issued2019-09-
dc.identifier.citationScripta Materialia, v. 170, Page. 16-19en_US
dc.identifier.issn1359-6462-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1359646219302921?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/111149-
dc.description.abstractTo overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF)-2015K1A3A7A03074026, Extremely Low Power Consumption Technology of eDRAM for Internet of Things and Institutional Projects in the Korea Institute of Science and Technology (Grant No. 2E29243), and by the MOTIE (Ministry of Trade, Industry and Energy (10049007) and KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. H.C. acknowledges the financial support of Federal Ministry of Education and Research (BMBF) under the "Make Our Planet Great Again - German Research Initiative" (MOPGA-GRI), 57429784, implemented by the German Academic Exchange Service Deutscher Akademischer Austauschdienst (DAAD.en_US
dc.language.isoenen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.subjectPhase-change materialen_US
dc.subjectPhase-change memoryen_US
dc.subjectDopingen_US
dc.subjectGe2Sb2Te5en_US
dc.subjectLattice distortionen_US
dc.titleMaterial design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortionen_US
dc.typeArticleen_US
dc.relation.volume170-
dc.identifier.doi10.1016/j.scriptamat.2019.05.024-
dc.relation.page16-19-
dc.relation.journalScripta Materialia-
dc.contributor.googleauthorChoi, Minho-
dc.contributor.googleauthorChoi, Heechae-
dc.contributor.googleauthorAhn, Jinho-
dc.contributor.googleauthorKim, Yong Tae-
dc.relation.code2019030597-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
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