32nm Pattern Collapse Modeling with Radial Distance and Rinse Speed

Abstract

Chemically amplified resist materials are now available to reach critical dimensions of the pattern close to the 32 nm node. Pattern collapse is a very serious problem in fine patterning of less than 32 nm critical dimension, because it decreases the yield. The pattern collapse is the pattern response to unbalanced capillary forces acting on the pattern walls during the spinning rinse step after the development process. Centrifugal force has not been considered in pattern collapse modeling up to now, so that pattem collapse due to spinning is studied. In this study, we investigated the 32nm node pattern collapse mechanism with radial distance and rinse speed of dense patterns. In the process of creating the simulation tool, the rotating model is used. As rinse speed and radial distance are increased, the critical aspect ratio is decreased. As a result, the pattern collapse is increased.