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32nm Pattern Collapse Modeling with Radial Distance and Rinse Speed

Title
32nm Pattern Collapse Modeling with Radial Distance and Rinse Speed
Author
오혜근
Keywords
pattern collapse; rinse speed; radial distance; spinning wafer; critical aspect ratio
Issue Date
2007-08
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 46, No. 8A, Page. 5101-5103
Abstract
Chemically amplified resist materials are now available to reach critical dimensions of the pattern close to the 32 nm node. Pattern collapse is a very serious problem in fine patterning of less than 32 nm critical dimension, because it decreases the yield. The pattern collapse is the pattern response to unbalanced capillary forces acting on the pattern walls during the spinning rinse step after the development process. Centrifugal force has not been considered in pattern collapse modeling up to now, so that pattem collapse due to spinning is studied. In this study, we investigated the 32nm node pattern collapse mechanism with radial distance and rinse speed of dense patterns. In the process of creating the simulation tool, the rotating model is used. As rinse speed and radial distance are increased, the critical aspect ratio is decreased. As a result, the pattern collapse is increased.
URI
https://iopscience.iop.org/article/10.1143/JJAP.46.5101http://repository.hanyang.ac.kr/handle/20.500.11754/106829
ISSN
0021-4922
DOI
10.1143/JJAP.46.5101
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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