27 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author오혜근-
dc.date.accessioned2019-06-24T07:09:34Z-
dc.date.available2019-06-24T07:09:34Z-
dc.date.issued2007-08-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 46, No. 8A, Page. 5101-5103en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttps://iopscience.iop.org/article/10.1143/JJAP.46.5101-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/106829-
dc.description.abstractChemically amplified resist materials are now available to reach critical dimensions of the pattern close to the 32 nm node. Pattern collapse is a very serious problem in fine patterning of less than 32 nm critical dimension, because it decreases the yield. The pattern collapse is the pattern response to unbalanced capillary forces acting on the pattern walls during the spinning rinse step after the development process. Centrifugal force has not been considered in pattern collapse modeling up to now, so that pattem collapse due to spinning is studied. In this study, we investigated the 32nm node pattern collapse mechanism with radial distance and rinse speed of dense patterns. In the process of creating the simulation tool, the rotating model is used. As rinse speed and radial distance are increased, the critical aspect ratio is decreased. As a result, the pattern collapse is increased.en_US
dc.language.isoen_USen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectpattern collapseen_US
dc.subjectrinse speeden_US
dc.subjectradial distanceen_US
dc.subjectspinning waferen_US
dc.subjectcritical aspect ratioen_US
dc.title32nm Pattern Collapse Modeling with Radial Distance and Rinse Speeden_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.5101-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS-
dc.contributor.googleauthorKim, Jong-Sun-
dc.contributor.googleauthorChang, Wook-
dc.contributor.googleauthorAn, Ilsin-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2007212719-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE