Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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BPPT–Bulk Potential Protection Technique for Hardened Sequentials
- Title
- BPPT–Bulk Potential Protection Technique for Hardened Sequentials
- Author
- 백상현
- Keywords
- single events; single event transient; single event upset; hardening; pass transistors; LET; SER
- Issue Date
- 2017-07
- Publisher
- IEEE
- Citation
- 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS), Page. 28-32
- Abstract
- In this paper, we present a method for hardening memory and sequential cells against soft errors. The effect of the ionizing particle on the bulk potential is exploited to prevent the induced SET from propagating in the circuit. The proposed method requires a minimum number of extra transistors. The solution is applied to D Flip-Flop design, and alpha and heavy-ions test results are presented.
- URI
- https://ieeexplore.ieee.org/document/8046194https://repository.hanyang.ac.kr/handle/20.500.11754/103490
- ISBN
- 978-1-5386-0352-9
- ISSN
- 1942-9401
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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