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dc.contributor.author백상현-
dc.date.accessioned2019-05-07T05:02:20Z-
dc.date.available2019-05-07T05:02:20Z-
dc.date.issued2017-07-
dc.identifier.citation2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS), Page. 28-32en_US
dc.identifier.isbn978-1-5386-0352-9-
dc.identifier.issn1942-9401-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8046194-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/103490-
dc.description.abstractIn this paper, we present a method for hardening memory and sequential cells against soft errors. The effect of the ionizing particle on the bulk potential is exploited to prevent the induced SET from propagating in the circuit. The proposed method requires a minimum number of extra transistors. The solution is applied to D Flip-Flop design, and alpha and heavy-ions test results are presented.en_US
dc.description.sponsorshipThe authors would like to thank NSERC and CMC Microsystems for their support.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectsingle eventsen_US
dc.subjectsingle event transienten_US
dc.subjectsingle event upseten_US
dc.subjecthardeningen_US
dc.subjectpass transistorsen_US
dc.subjectLETen_US
dc.subjectSERen_US
dc.titleBPPT–Bulk Potential Protection Technique for Hardened Sequentialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/IOLTS.2017.8046194-
dc.relation.page28-32-
dc.contributor.googleauthorNofal, I-
dc.contributor.googleauthorEvans, A-
dc.contributor.googleauthorHe, AL-
dc.contributor.googleauthorGuo, G-
dc.contributor.googleauthorLi, Y-
dc.contributor.googleauthorChen, L-
dc.contributor.googleauthorLiu, R-
dc.contributor.googleauthorWang, HB-
dc.contributor.googleauthorChen, M-
dc.contributor.googleauthorBaeg, S.H-
dc.contributor.googleauthorWen, SJ-
dc.contributor.googleauthorWong, R-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidbau-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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