Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility
- Title
- Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility
- Author
- 소홍윤
- Keywords
- ELECTRON-MOBILITY; HIGH-QUALITY; HETEROSTRUCTURES; TRANSPORT; LAYER
- Issue Date
- 2016-11
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, V.6, No.11, 115016
- Abstract
- In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm(2)/V.s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm(2)/V.s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
- URI
- https://aip.scitation.org/doi/abs/10.1063/1.4967816https://repository.hanyang.ac.kr/handle/20.500.11754/101101
- ISSN
- 2158-3226
- DOI
- 10.1063/1.4967816
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
- Files in This Item:
- Wafer-level MOCVD growth of AlGaN GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility.pdfDownload
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