Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 소홍윤 | - |
dc.date.accessioned | 2019-03-22T07:29:35Z | - |
dc.date.available | 2019-03-22T07:29:35Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | AIP ADVANCES, V.6, No.11, 115016 | en_US |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.4967816 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101101 | - |
dc.description.abstract | In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm(2)/V.s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm(2)/V.s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | en_US |
dc.description.sponsorship | This work was performed in part in the nano@Stanford labs, which are supported by the National Science Foundation as part of the National Nanotechnology Coordinated Infrastructure under award ECCS -1542152. The work was conducted at the MOCVD lab of Stanford Nanofabrication Facility (SNF), and Stanford Nano Shared Facilities (SNSF). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | ELECTRON-MOBILITY | en_US |
dc.subject | HIGH-QUALITY | en_US |
dc.subject | HETEROSTRUCTURES | en_US |
dc.subject | TRANSPORT | en_US |
dc.subject | LAYER | en_US |
dc.title | Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4967816 | - |
dc.relation.journal | AIP ADVANCES | - |
dc.contributor.googleauthor | Xu, Xiaoqing | - |
dc.contributor.googleauthor | Zhong, Jiebin | - |
dc.contributor.googleauthor | So, Hongyun | - |
dc.contributor.googleauthor | Novilas, Aras | - |
dc.contributor.googleauthor | Sommerhalter, Christof | - |
dc.contributor.googleauthor | Senesky, Debbie G. | - |
dc.contributor.googleauthor | Tang, Mary | - |
dc.relation.code | 2016010710 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | hyso | - |
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