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dc.contributor.author소홍윤-
dc.date.accessioned2019-03-22T07:29:35Z-
dc.date.available2019-03-22T07:29:35Z-
dc.date.issued2016-11-
dc.identifier.citationAIP ADVANCES, V.6, No.11, 115016en_US
dc.identifier.issn2158-3226-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.4967816-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/101101-
dc.description.abstractIn this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm(2)/V.s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm(2)/V.s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.description.sponsorshipThis work was performed in part in the nano@Stanford labs, which are supported by the National Science Foundation as part of the National Nanotechnology Coordinated Infrastructure under award ECCS -1542152. The work was conducted at the MOCVD lab of Stanford Nanofabrication Facility (SNF), and Stanford Nano Shared Facilities (SNSF).en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectELECTRON-MOBILITYen_US
dc.subjectHIGH-QUALITYen_US
dc.subjectHETEROSTRUCTURESen_US
dc.subjectTRANSPORTen_US
dc.subjectLAYERen_US
dc.titleWafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4967816-
dc.relation.journalAIP ADVANCES-
dc.contributor.googleauthorXu, Xiaoqing-
dc.contributor.googleauthorZhong, Jiebin-
dc.contributor.googleauthorSo, Hongyun-
dc.contributor.googleauthorNovilas, Aras-
dc.contributor.googleauthorSommerhalter, Christof-
dc.contributor.googleauthorSenesky, Debbie G.-
dc.contributor.googleauthorTang, Mary-
dc.relation.code2016010710-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MECHANICAL ENGINEERING-
dc.identifier.pidhyso-


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