중이온에 의한 SDRAM 컴포넌트의 리텐션 시간 측정 연구

Abstract

A single particle generates a Single Event Upset(SEU) as well as dose effects in silicon devices. The dose effects affect the threshold voltage decreasing, consequently, the data in DRAM bit cell could be corrupted within the 64 ms refresh interval. The experiments were performed by using heavy ion with SDRAM devices. The number of word failure was increased after beam irradiated.