Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 백상현 | - |
| dc.date.accessioned | 2019-03-18T08:14:56Z | - |
| dc.date.available | 2019-03-18T08:14:56Z | - |
| dc.date.issued | 2015-06 | - |
| dc.identifier.citation | 2015년도 대한전자공학회 하계종합학술대회, Page. 45-46 | en_US |
| dc.identifier.uri | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE06385540 | - |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100955 | - |
| dc.description.abstract | A single particle generates a Single Event Upset(SEU) as well as dose effects in silicon devices. The dose effects affect the threshold voltage decreasing, consequently, the data in DRAM bit cell could be corrupted within the 64 ms refresh interval. The experiments were performed by using heavy ion with SDRAM devices. The number of word failure was increased after beam irradiated. | en_US |
| dc.description.sponsorship | 본 연구는 지방자치단체 경기도청의 경기도지역협력 연구센터사업 (GRRC)의 지원을 받아 수행되었음. | en_US |
| dc.language.iso | ko_KR | en_US |
| dc.publisher | 대한전자공학회 | en_US |
| dc.title | 중이온에 의한 SDRAM 컴포넌트의 리텐션 시간 측정 연구 | en_US |
| dc.title.alternative | Retention Time Test on Heavy Ion-Induced SDRAM Devices | en_US |
| dc.type | Article | en_US |
| dc.relation.page | 2557-2558 | - |
| dc.contributor.googleauthor | 임철승 | - |
| dc.contributor.googleauthor | 박근용 | - |
| dc.contributor.googleauthor | 박경배 | - |
| dc.contributor.googleauthor | 백상현 | - |
| dc.sector.campus | E | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
| dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
| dc.identifier.pid | bau | - |
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