| 2019-09 | Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides | 심종인 |
| 2002-06 | Facet Reflectivity of a Spot-Size-Converter integrated Semiconductor Optical Amplifier | 심종인 |
| 2018-02 | Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes | 심종인 |
| 2001-06 | Fast and Accurate Quasi-3-Dimensional Capacitance Determination of Multilayer VLSI Interconnects | 심종인 |
| 2001-06 | Fast and accurate quasi-three-dimensional capacitance determination of multilayer VLSI interconnects | 심종인 |
| 2004-07 | Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser | 심종인 |
| 2016-11 | Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes | 심종인 |
| 2001-12 | GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings | 심종인 |
| 2012-04 | GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화 | 심종인 |
| 2002-12 | Generalized Traveling-Wave-Based Waveform Approximation Technique for the Efficient Signal Integrity Verification of Multicoupled Transmission Line System | 심종인 |
| 2022-07 | Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress | 심종인 |
| 2014-06 | Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes | 심종인 |
| 2007-11 | High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers | 심종인 |
| 2002-09 | High-Temperature and High-speed Operation of a 1.3-μm Uncooled InGaAsP-InP DFB Laser | 심종인 |
| 2002-09 | High-temperature and high-speed operation of a 1.3-mu m uncooled InGaAsP-InP DFB laser | 심종인 |
| 2012-02 | Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate | 심종인 |
| 2011-09 | Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire | 심종인 |
| 2006-10 | Highly integrated 10Gb/s optical sub-assembly and its circuit modeling | 심종인 |
| 2020-10 | Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis | 심종인 |
| 2014-11 | Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes | 심종인 |
| 2004-06 | An Improved Approach of Optical Loss Measurement Using Photocurrent and Optical Transmission in an Electroabsorption Modulator | 심종인 |
| 2008-04 | Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes | 심종인 |
| 2019-12 | Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad | 심종인 |
| 2020-01 | Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad | 심종인 |
| 2014-11 | Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes | 심종인 |
| 2016-01 | Influence of current aging on the characteristics of Near-Ultraviolet LEDs | 심종인 |
| 2016-04 | Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes | 심종인 |
| 2011-03 | Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances | 심종인 |
| 2017-10 | Interactive Study of Electroreflectance and Photocurrent Spectra in InGaN/GaN-Based Blue LEDs | 심종인 |
| 2017-05 | Internal Quantum Efficiency | 심종인 |
