| 2008-02 | Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness | 오혜근 |
| 2001-12 | Parameter extraction for 193 nm chemically amplified resist from refractive index change | 오혜근 |
| 2018-10 | Pattern Degradation with Larger Particles on EUV Pellicle | 오혜근 |
| 2015-04 | Patterning dependence on the mask defect for extreme ultraviolet lithography | 오혜근 |
| 2008-11 | Patterning of 32 nm 1:1 Line and Space by Resist Reflow Process | 오혜근 |
| 2004-08 | Photoinduced patterning of gold thin film | 오혜근 |
| 2007-09 | Photoresist Adhesion Effect of Resist Reflow Process | 오혜근 |
| 2007-02 | Photoresist adhesion effect of resist reflow process | 오혜근 |
| 2018-10 | A possible wafer heating during EUV exposure | 오혜근 |
| 2001-03 | Post Exposure Delay Consideration in 193 nm Chemically Amplified Resist | 오혜근 |
| 2003-02 | A practical extracting method of PEB parameters by using rotating compensator spectroscopic ellipsometer | 오혜근 |
| 2003-02 | A Practical Method of Extracting the Photoresist Exposure Parameters by Using A Dose-To-Clear Swing Curve | 오혜근 |
| 2003-02 | Prediction of the Critical Dimensions by Using a Threshold Energy Resist Model | 오혜근 |
| 2007-10 | Process Extension Techniques for Optical Lithography: Thermal Treatment, Polarization and Double Patterning | 오혜근 |
| 2007-04 | The process latitude dependency on local photomask haze defect in 70 nm binary intensity mask | 오혜근 |
| 2002-11 | Process Proximity correction by using neural networks | 오혜근 |
| 2002-11 | Process proximity correction by using neural networks | 오혜근 |
| 2002-12 | Process Study of a 200 nm Laser Pattern Generator | 오혜근 |
| 2001-12 | Real-Time Spectroscopic Ellipsometric Studies of photo-Assisted Chemical Processes | 오혜근 |
| 2005-05 | Reduction in the Mask Error Factor by Optimizing the Diffraction Order of a Scattering Bar in Lithography | 오혜근 |
