30 0

The process latitude dependency on local photomask haze defect in 70 nm binary intensity mask

Title
The process latitude dependency on local photomask haze defect in 70 nm binary intensity mask
Author
오혜근
Issue Date
2007-04
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 6607, Article no. 660720
Abstract
The crystal growth and haze formation on the reticle continue to be significant problems for the semiconductor industry. Recently, a pattern size has gradually reduced to enhance the integration of semiconductor device. As minimum linewidth has shrunk, the exposure wavelength has also progressively shrunk. The exposure wavelengths have been reduced progressively from g-line (436 nm), i-line (365 nm), KrF (248 nm), to ArF (193 nm). However, expose wavelength shrink caused some serious problems. One of the problems to be solved is growing defect in the reticle during the process. This growing defect on the reticle is called the haze. The haze is formed on both sides of the reticle, on the quartz side of the mask and on the chrome side of the mask. In this investigation, we varied the local haze defect size and the characteristics of the haze defect. And we get the critical dimension and the exposure latitude variation as the haze transmission changes and the haze phase shifts.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6607/1/Process-latitude-dependency-on-local-photomask-haze-defect-in-70/10.1117/12.728983.full?SSO=1http://repository.hanyang.ac.kr/handle/20.500.11754/106391
ISSN
0277-786X
DOI
10.1117/12.728983
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE