2019-09 | Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides | 심종인 |
2002-06 | Facet Reflectivity of a Spot-Size-Converter integrated Semiconductor Optical Amplifier | 심종인 |
2018-02 | Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes | 심종인 |
2001-06 | Fast and Accurate Quasi-3-Dimensional Capacitance Determination of Multilayer VLSI Interconnects | 심종인 |
2001-06 | Fast and accurate quasi-three-dimensional capacitance determination of multilayer VLSI interconnects | 심종인 |
2004-07 | Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser | 심종인 |
2016-11 | Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes | 심종인 |
2001-12 | GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings | 심종인 |
2012-04 | GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화 | 심종인 |
2002-12 | Generalized Traveling-Wave-Based Waveform Approximation Technique for the Efficient Signal Integrity Verification of Multicoupled Transmission Line System | 심종인 |
2022-07 | Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress | 심종인 |
2014-06 | Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes | 심종인 |
2007-11 | High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers | 심종인 |
2002-09 | High-Temperature and High-speed Operation of a 1.3-μm Uncooled InGaAsP-InP DFB Laser | 심종인 |
2002-09 | High-temperature and high-speed operation of a 1.3-mu m uncooled InGaAsP-InP DFB laser | 심종인 |
2012-02 | Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate | 심종인 |
2011-09 | Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire | 심종인 |
2006-10 | Highly integrated 10Gb/s optical sub-assembly and its circuit modeling | 심종인 |
2020-10 | Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis | 심종인 |
2014-11 | Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes | 심종인 |