Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오재응 | - |
dc.date.accessioned | 2019-02-26T07:51:12Z | - |
dc.date.available | 2019-02-26T07:51:12Z | - |
dc.date.issued | 2017-09 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 28, No. 36, Article no. 365702 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/aa7b9a/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/99240 | - |
dc.description.abstract | In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton ((DX)-X-0) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the (DX)-X-0 and deep level emission. To determine the nature of the D0X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the (DX)-X-0 shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the (DX)-X-0 emission. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRD) funded by the Ministry of Education (NRF-2016R1D1A1B03935895) and also supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program No. 10052221, 'Development of large scale GaN epitaxy wafers for 600 V high voltage operation'. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | nanorods | en_US |
dc.subject | hydrogenation | en_US |
dc.subject | neutral donor bound exciton | en_US |
dc.subject | band bending | en_US |
dc.title | A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation | en_US |
dc.type | Article | en_US |
dc.relation.no | 36 | - |
dc.relation.volume | 28 | - |
dc.identifier.doi | 10.1088/1361-6528/aa7b9a | - |
dc.relation.page | 1-7 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Park, Byung-Guon | - |
dc.contributor.googleauthor | Lee, Sang-Tae | - |
dc.contributor.googleauthor | Reddeppa, Maddaka | - |
dc.contributor.googleauthor | Kim, Moon-Deock | - |
dc.contributor.googleauthor | Oh, Jae-Eung | - |
dc.contributor.googleauthor | Lee, Sang-Kwon | - |
dc.relation.code | 2017001039 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | joh | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.