Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-02-12T02:33:23Z | - |
dc.date.available | 2019-02-12T02:33:23Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | MATERIALS RESEARCH BULLETIN, v. 82, NO. Special SI, Page. 22-25 | en_US |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.issn | 1873-4227 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S002554081630112X?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/98840 | - |
dc.description.abstract | In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V-TH) was reduced by approximately 45 mV by Ge +C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold. (C) 2016 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No.2015R1A2A2A01002965) and the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | Electronic materials | en_US |
dc.subject | Diffusion | en_US |
dc.subject | Defect | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Suppression of boron diffusion using carbon co-implantation in DRAM | en_US |
dc.type | Article | en_US |
dc.relation.no | Special SI | - |
dc.relation.volume | 82 | - |
dc.identifier.doi | 10.1016/j.materresbull.2016.03.011 | - |
dc.relation.page | 22-25 | - |
dc.relation.journal | MATERIALS RESEARCH BULLETIN | - |
dc.contributor.googleauthor | Lee, Suk Hun | - |
dc.contributor.googleauthor | Park, Se Geun | - |
dc.contributor.googleauthor | Kim, Shin Deuk | - |
dc.contributor.googleauthor | Jung, Hyuck-Chai | - |
dc.contributor.googleauthor | Kim, Il Gweon | - |
dc.contributor.googleauthor | Kang, Dong-Ho | - |
dc.contributor.googleauthor | Kim, Dae Jung | - |
dc.contributor.googleauthor | Lee, Kyu Pil | - |
dc.contributor.googleauthor | Choi, Joo Sun | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2016002250 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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