Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 좌용호 | - |
dc.date.accessioned | 2019-01-17T10:37:48Z | - |
dc.date.available | 2019-01-17T10:37:48Z | - |
dc.date.issued | 2018-07 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 657, Page. 32-37 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609018303043 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/81356 | - |
dc.description.abstract | A plasma-enhanced chemical vapor deposition (PECVD) was developed for the growth of highly conformal carbon-doped silicon nitride (SiCN) films with enhanced barrier properties drawing on tunable carbon contents, k-values, and wet etch rates (WER). Trisilylamine (TSA) was used as the main precursor and hexane was used as a hydrocarbon-containing additive precursor for carbon doping. At low deposition temperatures <= 400 C-degrees, we show that this PECVD process leads to the formation of SiCN films with good conformality of approximately 91% over high aspect ratio trench nanostructures (4.2:1) with a growth rate of similar to 2.5 ((A)over circle/cycle). In particular, the role of TSA and hexane precursors on the film growth mechanism and the k-values, and WER in the composite structures has been explored. The precursors were introduced pulse-wise into the reaction chamber while plasma was excited. The WER of the film was evaluated in a buffered hydrofluoric acid etchant. The k-value and carbon concentration varied depending on the TSA/hexane supply time in the ranges of 7-4.5 and around 6-40%, respectively. Analysis showed that the hexane precursor improved the WER of deposited SiCN films by more than a factor of 100 compared to when only TSA was used. The SiCN film with a thickness of 5.0 nm exhibited excellent prevention of moisture diffusion into the device. Furthermore, the step coverage was improved to equivalent conformality of the plasma-enhanced atomic layer deposition (PEALD) by modifying the supply method of the Si and carbon precursors and the moisture barrier property was secured with thicknesses of < 10 nm. In particular, the Si and carbon precursors are biased to maximize the process margin and control the film characteristics, where tuning can be easily implemented. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2015R1A5A1037548) and the Human Resources Development program (No. 20154030200680) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy, Republic of Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Plasma-enhanced chemical vapor deposition | en_US |
dc.subject | Trisilylamine | en_US |
dc.subject | Carbon doping | en_US |
dc.subject | Conformal deposition | en_US |
dc.subject | Moisture barrier | en_US |
dc.subject | SILICON-NITRIDE | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | H FILMS | en_US |
dc.subject | COPPER DIFFUSION | en_US |
dc.subject | TRIMETHYLSILANE | en_US |
dc.subject | PASSIVATION | en_US |
dc.subject | TETRAMETHYLSILANE | en_US |
dc.subject | INTEGRATION | en_US |
dc.subject | STRESS | en_US |
dc.subject | LAYER | en_US |
dc.title | Highly conformal carbon-doped SiCN films by plasma-enhanced chemical vapor deposition with enhanced barrier properties | en_US |
dc.type | Article | en_US |
dc.relation.volume | 657 | - |
dc.identifier.doi | 10.1016/j.tsf.2018.04.042 | - |
dc.relation.page | 32-37 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Lee, Woo-Jin | - |
dc.contributor.googleauthor | Choa, Yong-Ho | - |
dc.relation.code | 2018003110 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | choa15 | - |
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