Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
- Title
- Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
- Author
- 김재균
- Keywords
- InGaN/GaN LED; freestanding GaN; forward leakage current; conduction mechanism; tunneling
- Issue Date
- 2018-07
- Publisher
- MDPI AG
- Citation
- NANOMATERIALS, v. 8, No. 7, Article no. 543
- Abstract
- We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.
- URI
- https://www.mdpi.com/2079-4991/8/7/543/htmhttps://repository.hanyang.ac.kr/handle/20.500.11754/81222
- ISSN
- 2079-4991
- DOI
- 10.3390/nano8070543
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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