Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김정현 | - |
dc.date.accessioned | 2019-01-09T04:43:54Z | - |
dc.date.available | 2019-01-09T04:43:54Z | - |
dc.date.issued | 2018-06 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v. 66, No. 6, Page. 2638-2648 | en_US |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/8330036 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/81159 | - |
dc.description.abstract | Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25-mu m GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm(2) and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm(2). To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size. | en_US |
dc.description.sponsorship | This work was supported by the Agency for Defense Development, South Korea. This paper is an expanded version from the IEEE RFIC Symposium, Honolulu, HI, USA, June 4-6, 2017. (Corresponding author: Youngwoo Kwon.) | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Broadband amplifier | en_US |
dc.subject | distributed amplifier (DA) | en_US |
dc.subject | GaN monolithic microwave integrated circuit (MMIC) | en_US |
dc.subject | multioctave | en_US |
dc.subject | power amplifier (PA) | en_US |
dc.title | A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 66 | - |
dc.identifier.doi | 10.1109/TMTT.2018.2817521 | - |
dc.relation.page | 2638-2648 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.contributor.googleauthor | Park, H. | - |
dc.contributor.googleauthor | Nam, H. | - |
dc.contributor.googleauthor | Choi, K. | - |
dc.contributor.googleauthor | Kim, J. | - |
dc.contributor.googleauthor | Kwon, Y. | - |
dc.relation.code | 2018002527 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | junhkim | - |
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