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dc.contributor.author정기석-
dc.date.accessioned2019-01-08T07:40:11Z-
dc.date.available2019-01-08T07:40:11Z-
dc.date.issued2016-10-
dc.identifier.citationELECTRONICS LETTERS, v. 52, NO. 22, Page. 1844-1844en_US
dc.identifier.issn0013-5194-
dc.identifier.issn1350-911X-
dc.identifier.urihttp://mr.crossref.org/iPage?doi=10.1049%2Fel.2016.1111-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/81139-
dc.description.abstractIn dynamic random access memory (DRAM)-based main memory, access latency is a key performance metric. Commonly, the access latency is improved by employing row buffers that store the most recently accessed row data. However, if a new request tries to access a different row address from that in the row buffer, which is a row buffer conflict, the access latency is significantly increased. In a heterogeneous multi-core system, row buffer conflicts occur frequently because various types of processors with different access patterns share the main memory. A novel DRAM architecture that hides the latency penalty due to row buffer conflicts is proposed. The key idea is that read or write commands serviced during activate and precharge operations for different rows in the same bank are carried out by splitting the row buffer into two buffers. Experimental results show that the proposed DRAM architecture achieves up to 16% higher system performance for memory-intensive applications compared with a conventional DRAM architecture.en_US
dc.description.sponsorshipThis research was supported by the MSIP (Ministry of Science, ICT & Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2016-H8501-16-1005) supervised by the IITP (Institute for Information & Communications Technology Promotion).en_US
dc.language.isoenen_US
dc.publisherINST ENGINEERING TECHNOLOGY-IETen_US
dc.subjectmemory architectureen_US
dc.subjectbuffer storageen_US
dc.subjectperformance evaluationen_US
dc.subjectDRAM chipsen_US
dc.subjectmultiprocessing systemsen_US
dc.subjectmemory-intensive applicationsen_US
dc.subjectsystem performanceen_US
dc.subjectprecharge operationsen_US
dc.subjectactivate operationsen_US
dc.subjectwrite commandsen_US
dc.subjectread commandsen_US
dc.subjectlatency penaltyen_US
dc.subjectheterogeneous multicore systemen_US
dc.subjectaccess latency improvementen_US
dc.subjectperformance metricsen_US
dc.subjectdynamic random access memoryen_US
dc.subjectsplit row bufferen_US
dc.subjecthigh performance DRAM architectureen_US
dc.titleHigh performance DRAM architecture with split row bufferen_US
dc.typeArticleen_US
dc.relation.no22-
dc.relation.volume52-
dc.identifier.doi10.1049/el.2016.1111-
dc.relation.page1844-1844-
dc.relation.journalELECTRONICS LETTERS-
dc.contributor.googleauthorLee, M. -K.-
dc.contributor.googleauthorChung, K. -S.-
dc.relation.code2016001165-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidkchung-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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