Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김정현 | - |
dc.date.accessioned | 2018-12-18T01:34:02Z | - |
dc.date.available | 2018-12-18T01:34:02Z | - |
dc.date.issued | 2018-02 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 28, No. 2, Page. 126-128 | en_US |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8252734 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/80905 | - |
dc.description.abstract | This letter introduces a novel multiband directional coupler for RF front-end applications. Conventional narrowband directional couplers are widely used for mobile applications because of their compact size. However, excessive power loss due to strong coupling in the higher frequency range severely limits their bandwidth. To resolve this issue, we propose a dual directional coupler employing a coupling switching stage, where the asymmetric coupled lines can be electrically coupled or floated to mitigate severe coupling loss. The proposed coupler has been implemented to an integrated circuit using the silicon-on-insulator process. The measured results showed a considerably enhanced bandwidth from 0.69 to 4 GHz covering the entire frequency band of long-term evolution with a low power loss of less than -0.21 dB in the target frequency range. | en_US |
dc.description.sponsorship | This work was supported in part by the Human Resource Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning from the Ministry of Trade, Industry and Energy, South Korea, under Grant 20154030200730 and in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education under Grant 2016R1D1A1A09919288. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Coupling switching | en_US |
dc.subject | directional coupler | en_US |
dc.subject | dual coupler | en_US |
dc.subject | front-end stage | en_US |
dc.subject | RF switch | en_US |
dc.subject | silicon on insulator (SOI) | en_US |
dc.subject | T/R SWITCH | en_US |
dc.title | A Multiband Directional Coupler Using SOI CMOS for RF Front-End Applications | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 28 | - |
dc.identifier.doi | 10.1109/LMWC.2017.2783196 | - |
dc.relation.page | 126-128 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.contributor.googleauthor | Ji, Donghyeon | - |
dc.contributor.googleauthor | Kim, Junghyun | - |
dc.relation.code | 2018001167 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | junhkim | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.