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dc.contributor.author심광보-
dc.date.accessioned2018-12-07T01:37:09Z-
dc.date.available2018-12-07T01:37:09Z-
dc.date.issued2016-10-
dc.identifier.citationJOURNAL OF CERAMIC PROCESSING RESEARCH, v. 17, NO. 10, Page. 1015-1018en_US
dc.identifier.issn1229-9162-
dc.identifier.urihttp://jcpr.kbs-lab.co.kr/file/JCPR_vol.17_2016/JCPR17-10/02.2014-116_1015-1018.pdf-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80777-
dc.description.abstractWe report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire via epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO m-plane GaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrow x-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN. The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN, which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis.en_US
dc.description.sponsorshipThis work was supported by Industrial Strategic Technology Development Program of the Ministry of Trade, industry and Energy (no. 10041188) and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) No. 2012R1A2A2A01011702.en_US
dc.language.isoenen_US
dc.publisherKOREAN ASSOC CRYSTAL GROWTHen_US
dc.subjectHVPEen_US
dc.subjectm-plane GaNen_US
dc.subjectELOen_US
dc.subjectm-plane sapphireen_US
dc.titleDefect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxyen_US
dc.typeArticleen_US
dc.relation.no10-
dc.relation.volume17-
dc.relation.page1015-1018-
dc.relation.journalJOURNAL OF CERAMIC PROCESSING RESEARCH-
dc.contributor.googleauthorKim, Minho-
dc.contributor.googleauthorWoo, Seohwi-
dc.contributor.googleauthorSo, Byeongchan-
dc.contributor.googleauthorShim, Kwang Bo-
dc.contributor.googleauthorNam, Okhyun-
dc.relation.code2016002668-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidkbshim-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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