Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author심종인-
dc.date.accessioned2018-11-08T01:17:25Z-
dc.date.available2018-11-08T01:17:25Z-
dc.date.issued2008-04-
dc.identifier.citationELECTRONICS LETTERS, v. 44, No. 9, Page. 590-591en_US
dc.identifier.issn0013-5194-
dc.identifier.urihttp://digital-library.theiet.org/content/journals/10.1049/el_20080217-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80287-
dc.description.abstractImprovement of the electrostatic discharge (ESD) voltage in an InGaN/GaN blue light emitting diode (LED) grown on sapphire substrate is presented by inserting floating metal near the n-electrode. ESD voltages about four times larger than previously observed are experimentally obtained for LEDs with floating metal compared to those without.en_US
dc.language.isoen_USen_US
dc.publisherINSTITUTION ENGINEERING TECHNOLOGY-IETen_US
dc.subjectVERTICAL CHIPen_US
dc.subjectLEDSen_US
dc.titleImproved ESD voltage by inserting floating metal ring in GaN-based light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20080217-
dc.relation.journalELECTRONICS LETTERS-
dc.contributor.googleauthorHwang, S.-
dc.contributor.googleauthorShim, J.-
dc.relation.code2008202795-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-
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